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Your search returned 33 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Transactions On Electron Devices
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Year : 1998 Volume number : 45 Issue: 04 |
The Relation Between Luminous Properties And Oxygen Content In Zns Tbof Thin-Film Electroluminescent Devices Fabricated By Radio-Frequency Magnetron Sputterng Method
(Article)
Subject:
Delts
,
Electroluminescence
,
Ftir
,
Zns
Author:
C. W.
Wang
J. Y.
Liao
Meiso
Yokoyama
page:
757
-
762
High-Performance 670-Nm Algainp/Gainp Visible Strained Quanturm Well Lasers
(Article)
Subject:
Algainp
,
Beam
,
Semiconductor Lasers
,
Visible Human Slice Extraction
Author:
Y.K
Su
W
Liang
C. -Y
Tsai
C.S.
Chang
page:
763
-
767
Simulation And Measurement Of Multiplication In Thin-Film Electroluminescent Devices With Doped Probe Layers
(Article)
Subject:
Displays
,
Electroluminescence
,
Multiobjective
,
Space Cadets
Author:
Kristiaan
Neyts
Dorina
Corlatan
page:
768
-
777
Development Of A Novel Image Intensifier Of An Amplified Metal-Oxide-Semiconductor Imager Overlaid With Electron-Bombarded Amorphous Silicon
(Article)
Subject:
Ami
,
Amorphous Silicon
,
Eb Gain
,
Mcpherson County
Author:
Fumihiko
Andoh
Mitsuo
Kosugi
Tatsuro
Kawamura
page:
778
-
784
Characterization Of Highly Doped N-And P-Type 6h-Sic Piezoresistors
(Article)
Subject:
High Density
,
Characterization
Author:
Robert S.
Okojie
Alexander A.
Ned
William N.
Carr
page:
785
-
790
Theory Of Sige Waveguide Avalanche Detectors Operating At 1.3
(Article)
Subject:
Avalanche Photodiodes
,
Multi Fifo Queues
,
Optical Fibers
Author:
D. C.
Herbert
page:
791
-
796
An Analytical Fully-Depleted Soi Mosfet Model Considering The Effects Of Self-Heating And Source /Drain Resistance
(Article)
Subject:
Self-Healing
,
Series Resistance Effect
,
Soi Mosfet
Author:
Man-Chun
Hu
Sheng Lyang
Jang
page:
797
-
801
Verifiction Of Electron Distribution In Silicon By Means Of Hot Carrier Luminescence Measurements
(Article)
Subject:
Distribution Function
,
Hot Carrier
,
Luminescence
Author:
Luca
Selmi
M
Mastrapasqua
J
Bude
page:
802
-
808
A 0.1 Delta-Doped Mosfet Fabricated With Post-Low-Energy Implanting Selective Epitaxy
(Article)
Subject:
Epitaxial Growth Floating-Body Effect
,
Silicon
,
Mosfet
Author:
Kenji
Noda
Toru
Tatsumi
Ken
Nakajima
page:
809
-
814
Planarized Multilevel Interconnection Using Chemical Mechanical Polishing Of Selective Cvd-Ai Via Plugs
(Article)
Subject:
Aluminum Integrated Circuit Conductors
,
Electromigration
,
Cmp
Author:
Takao
Amazawa
Yoshinobu
Arita
Eiichi
Yamamoto
page:
815
-
820
A Continuous Compact Mosfet Model For Fully-And Partially-Depleted Soi Devices
(Article)
Subject:
Fda
,
Pd
,
Soi
Author:
Jeffrey W.
Sleight
Rafael
Rios
page:
821
-
825
Dynamic Modeling Of Amorphous And Polycrystalline-Silicon Devices
(Article)
Subject:
Amorphous
,
Gap States
,
Time-Dependent Pricing
Author:
Luigi
Colalongo
Marina
Valdinoci
Aurelio
Pellegrini
page:
826
-
833
A Robust And Physical Bsim3 Non-Quasi-Static Transient And Ac Small-Signal Model For Circuit Simulation
(Article)
Subject:
Robust
,
Physical Based
,
Model Choice
Author:
Mansun
Chan
Kelvin Y.
Hui
Ping K.
Ko
page:
834
-
841
Two-Dimensional Numerical Simulation Of Schottky Barrier Mosfet With Channel Length To 10nm
(Article)
Subject:
Mosfets
,
Scaling
,
Ultrasonic
Author:
Changcheng
Huang
Wei
Zhang
C. H
Yang
page:
842
-
848
Lateral Scr Devices With Low-Voltage High-Current Triggering Characteristics For Output Esd Protection In Submicron Cmos Technology
(Article)
Subject:
Lateral Schottky
,
High-Capacitance Busses
,
Cmos
Author:
Ming-Dou
Ker
page:
849
-
860
The Impact Of Metal-1 Plasma Processing Induced Hot Carrier Injection On Thecharacteristics And Reliability Of N-Mosfet'S
(Article)
Subject:
Impact Analysis
,
Carroer-Sense Multiple Access
,
Reliability
Author:
Motasim G. Ei
Hassan
Osama O.
Awadelkarim
James D.
Werking
page:
861
-
866
Analysis Of Quantum Effects In Nonuniformly Doped Mos Structures
(Article)
Subject:
Mos
,
Devices
,
Quantization
,
Silicon
Author:
Claudio
Fiegna
Antonio
Abramo
page:
877
-
880
Trapped Charge Distributions In Thin (10nm) Sio2 Films Subected To Static And Dynamic Stresses
(Article)
Subject:
Charge Carrier Processes
,
Dielectric Breakdown
,
Oxide Degradation
Author:
R.
Rodriguez
M.
Nafria
X.
Aymerich
page:
881
-
888
Cmos Active Pixel Pixel Image Sensors Fabricated Using A 1.8-V, 0.25- Cmos Technology
(Article)
Subject:
Cmos
,
Pixel Wise
,
Sensors
Author:
Hon-Sum Philip
Wong
Richcrd T.
Chang
Paul D.
Agnello
page:
889
-
894
A Comparison Of Hot-Carrier Degradation In Tungsten Polycide Gate And Poly Gate P-Mosfet'S
(Article)
Subject:
Gate-To-Drain Capacitance
,
Hot-Carrier Degradation
,
Tungsten Polycide
Author:
D. S.
Ang
C. H.
Ling
page:
895
-
903
New Insights In The Relation Relatio Between Electron Trap Generation And The Statistical Properties Of Oxide Breakdown
(Article)
Subject:
Relation Extraction
,
Properties
,
Statistical
Author:
Robin
Degraeve
G.
Groeseneken
J. L.
Ogier
Herman E
Maes
page:
904
-
911
Characterization Of Polysilicon Oxides Thermally Grown And Deposited On The Polished Polysilicon Films
(Article)
Subject:
Characterisation
,
Oxidants
,
Polysilicon
Author:
Tan Fu
Lei
Shyh Yin
Shiau
Chao Sung
Lai
page:
912
-
917
A Multicomb Variance Reduction Scheme For Monte Carlo Semiconductor Simulators
(Article)
Subject:
Importance Sampling
,
Monte Carlo
,
Variance Reduction
Author:
Mark G.
Gray
Thomas E.
Booth
Charles M.
Smell
page:
918
-
924
High-Performance Thin-Film Transistors Fabricated Using Excimer Laser Processing And Grain Engineering
(Article)
Subject:
Excimer Laser Annealing
,
Floating Body Effects
,
Full Melt Threshold
Author:
G. K.
Giust
T. W.
Sigmon
page:
925
-
932
Suppressing The Parasitic Bipolar Action In Fully-Depleted Mosfet''S/Simox By Using Back-Side Bias-Temperature Treatment
(Article)
Subject:
Bias-Temperature
,
Fully-Depleted Soi Mosfet
,
Simox
Author:
H
Koizumi
Toshiaki
Tsuchiya
Maskazu
Shimaya
page:
933
-
938
Assessing The Reliability Of Silicon Nitride Capacitors In A Gaas Ic Process
(Article)
Subject:
Dielectric Breakdown
,
Reliability Estimation
,
Reliability Modeling
Author:
Bob
Yeats
page:
939
-
946
Analysis On Accuracy Of Charge-Pumping Measurement With Gate Sawtooth Pluses
(Article)
Subject:
Charge Carrier Density
,
Mosfets
,
Silicon Avalanche Photodiode
Author:
P. T.
Lai
J. P.
Xu
Y C
Cheng
page:
947
-
952
A Highly Efficient 1.9-Ghz Si High-Power Mos Amplifier
(Article)
Subject:
Al-Shorted Metal-Silicide Si Gate
,
Amplifier
,
Pcs Testing
,
Si
Author:
Isao
Yoshida
Mineo
Katsueda
Yasuo
Maruyama
page:
953
-
956
A Mos-Controlled High-Voltage Thyristor With Low Swithin Losses
(Article)
Subject:
Mos-Controlled Thyristor
,
Semiconductor Devices
,
Thyristor Bridge
Author:
Willy
Hermansson
Karin
Andersson
Dag
Sigurd
page:
957
-
965
Accurate Cold-Test Model Of Helical Twt Slow-Wave Circuits
(Article)
Subject:
Attenuators
,
Dispersion
,
Helix
,
Impedance
Author:
Carol L.
Kory
James A.
Dayton
page:
966
-
971
Effect Of Helical Slow-Wave Circuit Variations On Twt Cold-Test Characteristics
(Article)
Subject:
Dispersion
,
Helix
,
Impedance
,
Manufactureing
Author:
Carol L.
Kory
James A.
Dayton
page:
972
-
976
Technology And Charcterization Of Diamond Field Emitter Sttuctures
(Article)
Subject:
Cvd
,
Diamond Materials
,
Electron Emission
Author:
D.
Hong
M.
Aslam
page:
977
-
985
Design Of A Single-Stage Depressed Collector For High-Power, Pulsed Gyroklystron Amplifiers
(Article)
Subject:
Depressed Collector
,
Microwave Sources
,
Gyroklystron Amplifier
Author:
Girish P.
Saraph
Victor L
Granatstein
S. S
Lawson
page:
986
-
990
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